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Herausgeber: 
  • A G Cullis
  • P A Midgley
  • Microscopy of Semiconducting Materials 2007: Proceedings of the 15th Conference, 2-5 April 2007, Cambridge, UK 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

    Auf mobile öffnen
     
    Lieferstatus:   i.d.R. innert 14-24 Tagen versandfertig
    Veröffentlichung:  September 2008  
    Genre:  Naturwissensch., Medizin, Technik 
     
    C / Chemistry and Materials Science / Electronic Devices / Electronics / Electronics and Microelectronics, Instrumentation / Electronics engineering / Materials science / Materials Science, general / Measurement / Measurement Science and Instrumentation / Microelectronics / Microscopy / Physical measurements / Scientific equipment, experiments & techniques / Scientific standards, measurement etc / Solid State Physics / spectroscopy / Spectroscopy and Microscopy / Spectrum analysis, spectrochemistry, mass spectrometry
    ISBN:  9781402086144 
    EAN-Code: 
    9781402086144 
    Verlag:  Springer Nature Singapore 
    Einband:  Gebunden  
    Sprache:  English  
    Serie:  #120 - Springer Proceedings in Physics  
    Dimensionen:  H 241 mm / B 167 mm / D 28 mm 
    Gewicht:  988 gr 
    Seiten:  498 
    Bewertung: Titel bewerten / Meinung schreiben
    Inhalt:
    The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
    Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.

      
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